to-92 plastic-encapsulate transistors 2SC1674 transistor (npn) features z high current gain bandwidth product f t =600mhz(typ.), z high power gain g pe =22db at f=100mhz maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 20 ma p c collector power dissipation 250 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 100 a,i c =0 4 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 0.1 a dc current gain h fe v ce =6 v, i c = 1ma 40 180 collector-emitter saturation voltage v ce(sat) i c =10ma, i b = 1ma 0.3 v base-emitter voltage v be(on) v ce =6v, i c = 1ma 0.65 0.77 v transition frequency f t v ce =6 v, i c = 1ma 400 mhz collector output capacitance c ob v ce =6v,i e =0, f =1mhz 1.3 pf classification of h fe rank y gr bl range 40-80 60-120 90-180 1 2 3 to-92 1.emitter 2 collector 3. base tiger electronic co.,ltd
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